TS256MSK64V1U Transcend 2GB Memory Module 1066MHz DDR3 SDRAM CL5 Non-ECC 204-pin SO-DIMM Deals

Product Name: Transcend 2GB Memory Module 1066MHz DDR3 SDRAM CL5 Non-ECC 204-pin SO-DIMM

Manufacturer: Transcend

Product Features :

• 1. 2048MB memory 2
• 2. 204-pin SO-DIMM memory package 5
• 3. Bi-directional Differential Data-Strobe 13
• 4. Dual In-Line Memory Module 6
• 5. Internal calibration through ZQ pin 12
• 6. JEDEC standard 1.5V ? 0.075V Power supply 11
• 7. Limited lifetime warranty 14
• 8. Max clock Freq: 533MHZ; 1066Mb/S/Pin 7
• 9. Memory Speed: 1066MHz 4
• 10. Memory Type: DDR3 SDRAM 3
• 11. On Die Termination with ODT pin 9
• 12. RoHS compliant 8
• 13. Serial Presence Detect (SPD) with serial EEPROM 10
• 14. Transcend memory module 1

Transcend memory modules are with carefully selected chips and complete laboratory test. All our memory modules come with a lifetime warranty and a global service network, providing a cost-effective solution with the highest stability and reliability. Consumers have come to trust and support Transcend memory modules because of their high quality, outstanding performance, excellent compatibility, and superb reliability and stability. As always, Transcend memory modules will provide users with the ultimate computing experience. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The TS256MSK64V1U is a 256M x 64bits DDR3-1066 SO-DIMM. The TS256MSK64V1U consists of 16pcs 128Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS256MSK64V1U is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

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