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RS Components - onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK
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Product Name: onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK
Manufacturer: onsemi
Product Features :
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onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 0.02mA, Dimensions: 6.73 x 6.22 x 2.38mm
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