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RS Components - onsemi NJD35N04G NPN Darlington Transistor, 4 A 350 V HFE:2000, 3-Pin DPAK
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Product Name: onsemi NJD35N04G NPN Darlington Transistor, 4 A 350 V HFE:2000, 3-Pin DPAK
Manufacturer: onsemi
Product Features :
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onsemi NJD35N04G NPN Darlington Transistor, 4 A 350 V HFE:2000, 3-Pin DPAK, Maximum Emitter Base Voltage: 5 V, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Transistor Configuration: Single, Number of Elements per Chip: 1, Maximum Base Emitter Saturation Voltage: 2 V, Maximum Collector Base Voltage: 700 V, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Collector Cut-off Current: 250mA, Dimensions: 6.73 x 7.49 x 2.38mm, MPN: NJD35N04T4G
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