Product Name: IGBT ON Semiconductor HGTG10N120BND TO 247 single
Manufacturer: ON Semiconductor
Product Features :
Product Description :
Collector current: 35 A; Collector cutoff current: 250 µA; Collector emitter reverse voltage U(CES): 1200 V; Collector-emitter saturation voltage (max.): 2.7 V; Configuration (transistors): single; Enclosure type (semiconductors): TO 247; I(CM): 80 A; Input type: Standard; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Through-hole; Off delay t(d)(off)(2): 165 ns; On delay (t(d)(on): 23 ns; Power (max) P(TOT): 298 W; Q(G): 100 nC; Reverse recovery time T(rr): 70 ns; RoHS-compliant: Yes; Transistor type (category): IGBT; Type (manufacturer type): HGTG10N120BND; Type (transistors): NPT
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