Product Name: IGBT ON Semiconductor HGTD1N120BNS9A TO 252AA single
Manufacturer: ON Semiconductor
Product Features :
Product Description :
Collector current: 5.3 A; Collector cutoff current: 250 µA; Collector emitter reverse voltage U(CES): 1200 V; Collector-emitter saturation voltage (max.): 2.9 V; Configuration (transistors): single; Enclosure type (semiconductors): TO 252AA; I(CM): 6 A; Input type: Standard; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Surface-mount; Off delay t(d)(off)(2): 67 ns; On delay (t(d)(on): 15 ns; Power (max) P(TOT): 60 W; Q(G): 14 nC; RoHS-compliant: Yes; Transistor type (category): IGBT; Type (manufacturer type): HGTD1N120BNS9A; Type (transistors): NPT
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