Product Name: Transistor (BJT) - Discrete Nexperia PXT2907A,115 SOT 89 3 1
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: -600 mA; Collector cutoff current: -10 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.): -1.6 V; DC current gain (hFE): 100; DC current gain hFE - reference current: -150 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): SOT 89 3; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.1 W; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 200 MHz; Type (manufacturer type): PXT2907A,115; Type (transistors): PNP
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