Product Name: Transistor (BJT) - Arrays, bias voltage Nexperia PEMH10,115 SOT 666
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: 100 mA; Collector cutoff current: 1 µA; Collector emitter voltage U(CEO): 50 V; Collector-emitter saturation voltage (max.): 100 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): SOT 666; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 2; Power (max) P(TOT): 300 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays, bias voltage; Transit frequency f(T): 230 MHz; Type (manufacturer type): PEMH10,115; Type (transistors): NPN - biased
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