Product Name: Transistor (BJT) - Arrays, bias voltage Nexperia PEMD3,115 SOT 666
Product Category: Semiconductors in Electronics
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: -100 mA, +100 mA; Collector cutoff current: -100 nA, +100 nA; Collector emitter voltage U(CEO): -50 V, +50 V; Collector-emitter saturation voltage (max.): -150 mV, +150 mV; DC current gain (hFE): 30, 30; DC current gain hFE - reference current: -5 mA, +5 mA; DC current gain hFE - reference voltage: -5 V, +5 V; Enclosure type (semiconductors): SOT 666; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 300 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays, bias voltage; Transit frequency f(T): 230 MHz, 180 MHz; Type (manufacturer type): PEMD3,115; Type (transistors): NPN - biased, PNP - biased
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