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Transistor (BJT) - Discrete Nexperia PBSS5580PA,115 HUSON 3 1 Deals

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Nexperia PBSS5580PA,115 Product Details:

Product Name: Transistor (BJT) - Discrete Nexperia PBSS5580PA,115 HUSON 3 1

Manufacturer: Nexperia

Product Features :

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Product Description :

Collector current: -4 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -80 V; Collector-emitter saturation voltage (max.): -420 mV; DC current gain (hFE): 140; DC current gain hFE - reference current: -2 A; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): HUSON 3; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2.1 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 110 MHz; Type (manufacturer type): PBSS5580PA,115; Type (transistors): PNP

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