Product Name: Transistor (BJT) - Discrete Nexperia BC856BW,115 SOT 323 1
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: -100 mA; Collector cutoff current: -15 nA; Collector emitter voltage U(CEO): -65 V; Collector-emitter saturation voltage (max.): -600 mV; DC current gain (hFE): 220; DC current gain hFE - reference current: -2 mA; DC current gain hFE - reference voltage: -5 V; Enclosure type (semiconductors): SOT 323; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 200 mW; RoHS-compliant: Yes; Series (semiconductors): Technique automobile/AEC-Q101; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC856BW,115; Type (transistors): PNP
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