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Transistor (BJT) - Discrete Nexperia BC817,215 TO 236AB 1 Deals

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Nexperia BC817,215 Product Details:

Product Name: Transistor (BJT) - Discrete Nexperia BC817,215 TO 236AB 1

Manufacturer: Nexperia

Product Features :

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Product Description :

Collector current: 500 mA; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): 45 V; Collector-emitter saturation voltage (max.): 700 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 100 mA; DC current gain hFE - reference voltage: 1 V; Enclosure type (semiconductors): TO 236AB; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 100 MHz; Type (manufacturer type): BC817,215; Type (transistors): NPN

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