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MT16KTF1G64HZ-1G6E1 Micron (8GB) Memory Module DDR3L SDRAM Non-ECC SODIMM Deals

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Compare Micron MT16KTF1G64HZ-1G6E1

(4) Price comparison results
Product Information:
Amazon.co.uk - DDR3L Micron - 8 GB-SO DIMM 204-PIN DDR3L 1600MHz 8GB Memory
Product Information:
Amazon.co.uk - 8GB Micron DDR3 1600 MHz PC3-12800 1.35V Laptop RAM Memory MT16KTF1G64HZ-1G6E1 693374-001
Product Information:
Amazon.co.uk - 8GB SODIMM Micron Laptop RAM mt16ktf1g64hz-1g6e1 PC3L-12800S 1600MHz DDR3
Product Information:
Amazon.co.uk - Micron 8GB PC3-12800 DDR3-1600 1600MHz Laptop Memory RAM MT16KTF1G64HZ-1G6E1

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Micron MT16KTF1G64HZ-1G6E1 Product Details:

Product Name: Micron (8GB) Memory Module DDR3L SDRAM Non-ECC SODIMM

Manufacturer: Micron

Product Features :

  • 1. 204-pin, small outline dual in-line memory module (SODIMM) 2
  • 2. 4GB (512 Meg x 64), 8GB (1 Gig x 64) 4
  • 3. Backward compatible to VDD = 1.5V ?0.075V 7
  • 4. DDR3L functionality and operations supported as defined in the component data sheet 1
  • 5. Dual rank 10
  • 6. Fast data transfer rates: PC3-14900, PC3-12800, or PC3-10600 3
  • 7. Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) 11
  • 8. Fly-by topology 16
  • 9. Gold edge contacts 14
  • 10. Halogen-free 15
  • 11. Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals 9
  • 12. On-board I2C serial presence-detect (SPD) EEPROM 12
  • 13. Selectable BC4 or BL8 on-the-fly (OTF) 13
  • 14. Terminated control, command, and address bus 17
  • 15. VDD = 1.35V (1.283V-1.45V) 5
  • 16. VDD = 1.5V (1.425-1.575V) 6
  • 17. VDDSPD = 3.0-3.6V 8
Product Description :

DDR3 SDRAM modules are high-speed, CMOS dynamic random access memory modules that use internally configured 8-bank DDR3 SDRAM devices. DDR3 SDRAM modules use DDR architecture to achieve high-speed operation. DDR3 architecture is essentially an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for the DDR3 SDRAM module effectively consists of a single 8n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR3 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals.

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