Product Name: Transistor (BJT) - Discrete DIODES Incorporated ZXTP2012GTA SOT 223
Manufacturer: DIODES Incorporated
Product Features :
Product Description :
Collector current: -5.5 A; Collector cutoff current: -20 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.): -250 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -2 A; DC current gain hFE - reference voltage: -1 V; Enclosure type (semiconductors): SOT 223; Manufacturer: DIODES Incorporated; Manufacturer code (components): DIn; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 3 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 120 MHz; Type (manufacturer type): ZXTP2012GTA; Type (transistors): PNP
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