Product Name: Transistor (BJT) - Discrete DIODES Incorporated ZTX851STZ E-Line
Manufacturer: DIODES Incorporated
Product Features :
Product Description :
Collector current: 5 A; Collector cutoff current: 1 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 250 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: 2 A; DC current gain hFE - reference voltage: 1 V; Enclosure type (semiconductors): E-Line; Manufacturer: DIODES Incorporated; Manufacturer code (components): DIn; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 1.2 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 130 MHz; Type (manufacturer type): ZTX851STZ; Type (transistors): NPN
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