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RS Components - onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
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Product Name: onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
Manufacturer: onsemi
Product Features :
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onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251), Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Collector Cut-off Current: 20µA, Dimensions: 6.73 x 2.38 x 6.35mm
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