Product Name: Transistor (BJT) - Discrete ON Semiconductor NZT660 SOT 223 4 1
Manufacturer: ON Semiconductor
Product Features :
Product Description :
Collector current: -3 A; Collector cutoff current: -100 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.): -550 mV; DC current gain (hFE): 100; DC current gain hFE - reference current: -500 mA; DC current gain hFE - reference voltage: -2 V; Enclosure type (semiconductors): SOT 223 4; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 2 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 75 MHz; Type (manufacturer type): NZT660; Type (transistors): PNP
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