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Transistor (BJT) - Discrete ON Semiconductor 2N3055G TO 3 1 Deals
Product Information:
Conrad Electronic - ON Semiconductor Transistor (BJT) - Discrete 2N3055G TO 3 No. of channels 1 NPN
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Join Voucher ListON Semiconductor 2N3055G Product Details:
Product Name: Transistor (BJT) - Discrete ON Semiconductor 2N3055G TO 3 1
Product Category: Tools in Hardware
Manufacturer: ON Semiconductor
Product Features :
- No features available.
Collector current: 15 A; Collector cutoff current: 700 µA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 3 V; DC current gain (hFE): 20; DC current gain hFE - reference current: 4 A; DC current gain hFE - reference voltage: 4 V; Enclosure type (semiconductors): TO 3; Manufacturer: ON Semiconductor; Manufacturer code (components): OnS; Mounting type: Enclosure; No. of channels: 1; Power (max) P(TOT): 115 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Type (manufacturer type): 2N3055G; Type (transistors): NPN
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