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Transistor (BJT) - Discrete NXP Semiconductors PHE13009,127 TO 220AB Deals
Product Information:
Conrad Electronic - NXP Semiconductors Transistor (BJT) - Discrete PHE13009,127 TO 220AB No. of channels 1 NPN
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Join Voucher ListNXP Semiconductors PHE13009,127 Product Details:
Product Name: Transistor (BJT) - Discrete NXP Semiconductors PHE13009,127 TO 220AB
Product Category: Tools in Hardware
Manufacturer: NXP Semiconductors
Product Features :
- No features available.
Collector current: 12 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 400 V; Collector-emitter saturation voltage (max.): 2 V; DC current gain (hFE): 8; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer: NXP Semiconductors; Manufacturer code (components): NXP; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 80 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Type (manufacturer type): PHE13009,127; Type (transistors): NPN
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