Product Name: Transistor (BJT) - Arrays Nexperia PBSS4160DPN,115 TSOP 6 1
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: -900 mA, +1 A; Collector cutoff current: 100 nA; Collector emitter voltage U(CEO): -60 V, +60 V; Collector-emitter saturation voltage (max.): -330 mV, +250 mV; DC current gain (hFE): 150, 200; DC current gain hFE - reference current: -500 mA, +500 mA; DC current gain hFE - reference voltage: -5 V, +5 V; Enclosure type (semiconductors): TSOP 6; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 420 mW; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Arrays; Transit frequency f(T): 220 MHz, 185 MHz; Type (manufacturer type): PBSS4160DPN,115; Type (transistors): NPN , PNP
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