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Transistor (BJT) - Discrete, bias voltage Nexperia PBRN113ET,215 TO 236 3 Deals
Nexperia PBRN113ET,215 Product Details:
Product Name: Transistor (BJT) - Discrete, bias voltage Nexperia PBRN113ET,215 TO 236 3
Manufacturer: Nexperia
Product Features :
- No features available.
Collector current: 600 mA; Collector cutoff current: 500 nA; Collector emitter voltage U(CEO): 40 V; Collector-emitter saturation voltage (max.): 1.15 V; DC current gain (hFE): 180; DC current gain hFE - reference current: 300 mA; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 236 3; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 250 mW; Resistance R1: 1 kΩ; Resistance R2: 1 kΩ; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete, bias voltage; Type (manufacturer type): PBRN113ET,215; Type (transistors): NPN - biased
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