Product Name: Transistor (BJT) - Discrete Nexperia BSP52,115 SOT 223 1
Manufacturer: Nexperia
Product Features :
Product Description :
Collector current: 1 A; Collector cutoff current: 50 nA; Collector emitter voltage U(CEO): 80 V; Collector-emitter saturation voltage (max.): 1.3 V; DC current gain (hFE): 2000; DC current gain hFE - reference current: 500 mA; DC current gain hFE - reference voltage: 10 V; Enclosure type (semiconductors): SOT 223; Manufacturer: Nexperia; Manufacturer code (components): NEX; Mounting type: Surface-mount; No. of channels: 1; Power (max) P(TOT): 1.25 W; RoHS-compliant: Yes; Transistor type (category): Transistor (BJT) - Discrete; Transit frequency f(T): 200 MHz; Type (manufacturer type): BSP52,115; Type (transistors): NPN - Darlington
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